Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. The properties of gan allow for high current, high voltage breakdown and high. Free devices maximum ratings rating symbol value unit collector. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Lead temperature soldering, storage temperature tj. The product status of the devices described in this data sheet may have changed since this data sheet was published. Ja thermal resistance, junction to ambient 200 357 cw. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. Base suffix y means hfe 180240 in 2n5551 test condition. Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
Here is an image showing the pin diagram of the this transistor. Ss9015 pnp epitaxial silicon transistor filipeflop. Collector current datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Semiconductor components industries, llc, 2007 march, 2007 rev.
Junction, storage temperature tj, t stg 150, 55150 c. Ss9015 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 45 v vebo emitterbase voltage 5 v ic collector current 100 a. To92 plasticencapsulate transistors s9018 transistor npn features z high current gain bandwidth product maximum ratings t a25. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Absolute maximum ratings maximum temperatures storage temperature 555. Cn 2n5551 2n5551rlra 2n5551rlrm 2n5551rlrp 2n55551zl1 2n5550 2n5550rlra 2n5550rlrp 2n5550rlrpg 2n5551g 2n5551rl1 2n5551zl1 datasheet pdf downlaod from datasheet.
Free packages are available maximum ratings rating symbol value unit collector. Toshiba transistor silicon npn epitaxial type pct process 2sc1815. Elektronische bauelemente pnp plastic encapsulated transistor. Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. Please consult the most recently issued data sheet before initiating or completing a design.
It also has decent switching characteristics so can amplify lowlevel signals. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Silicon npn transistor general purpose amplifier switch. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The tip31c is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard tip31c that make this device suitable for audio, power linear and switching applications. Toshiba transistor silicon npn epitaxial type pct process. Transistor npn small signal high voltage transistor npn. The gs0650111l is an enhancement mode gan onsilicon power transistor. A92 transistor pnp features high voltage maximum ratings t a25. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or. Tj,tstg operation and storage junction temperature range. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
682 1465 1287 418 1265 825 518 1229 1389 1161 83 559 947 1160 371 311 885 656 242 648 341 547 430 681 1470 898 76 1083 961 726 1350 462 890 1493 1010 1320 227 355 397 1083 434 581 116 1064 45 1393 1194 1288